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Ver especificaciones del producto para detalles del producto.
| Número de pieza | GA200-001PD |
|---|---|
| Estado de la pieza | Obsolete |
| Tipo de presión | Differential |
| Presión operacional | 1 PSI (6.89 kPa) |
| Tipo de salida | Analog Voltage |
| Salida | 0.25 V ~ 4 V |
| Exactitud | ±1.5% |
| Suministro de voltaje | 4.75 V ~ 5.25 V |
| Tamaño del puerto | Male - 0.13" (3.23mm) Tube, Dual |
| Estilo de puerto | Barbed |
| Caracteristicas | Amplified Output, Temperature Compensated |
| Estilo de terminación | PCB |
| Presión máxima | 10 PSI (68.95 kPa) |
| Temperatura de funcionamiento | -25°C ~ 80°C |
| Paquete / caja | 3-SIP Module |
| Paquete de dispositivo del proveedor | - |
| Imagen | Número de pieza | Fabricantes | Descripción | En stock | Ver | |
|---|---|---|---|---|---|---|
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GA200-001PD | TE Connectivity Measurement Specialties | SENSOR TRANSDUCER 0.250-4.5V PCB | 0 | Detalles | |
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GA200-005WD | TE Connectivity Measurement Specialties | SENSOR PRESS GAUGE 5" H2O 3SIP | 0 | Detalles | |
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GA200-010WD | TE Connectivity Measurement Specialties | SENSOR PRESS DIFF 10" H2O 3SIP | 0 | Detalles | |
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GA200-015WD | TE Connectivity Measurement Specialties | SENSOR PRESS GAUGE 15" H2O 3SIP | 0 | Detalles | |
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GA200SA60S | Vishay Semiconductor Diodes Division | IGBT STD 600V 100A SOT227 | 0 | Detalles | |
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GA200SA60U | Vishay Semiconductor Diodes Division | IGBT UFAST 600V 100A SOT227 | 0 | Detalles | |
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GA201AE3 | Microsemi Corporation | SCR | - | 1337 | Detalles |
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GA20JT12-247 | GeneSiC Semiconductor | TRANS SJT 1.2KV 20A | 0 | Detalles | |
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GA20JT12-263 | GeneSiC Semiconductor | TRANS SJT 1200V 45A | 263 | Detalles | |
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GA20SICP12-247 | GeneSiC Semiconductor | TRANS SJT 1200V 45A TO247 | 0 | Detalles | |
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GA20SICP12-263 | GeneSiC Semiconductor | SIC CO-PACK SJT/RECT 20A 1.2KV | 90 | Detalles |