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Ver especificaciones del producto para detalles del producto.
| Número de pieza | GA200SA60U |
|---|---|
| Estado de la pieza | Obsolete |
| Tipo de IGBT | - |
| Configuración | Single |
| Voltaje: ruptura del emisor del colector (máximo) | 600V |
| Current - Collector (Ic) (Max) | 200A |
| Potencia - Max | 500W |
| Vce (on) (Max) @ Vge, Ic | 1.9V @ 15V, 100A |
| Corriente - corte de colector (máximo) | 1mA |
| Capacitancia de entrada (Cies) @ Vce | 16.5nF @ 30V |
| Entrada | Standard |
| Termistor NTC | No |
| Temperatura de funcionamiento | -55°C ~ 150°C (TJ) |
| Tipo de montaje | Chassis Mount |
| Paquete / caja | SOT-227-4, miniBLOC |
| Paquete de dispositivo del proveedor | SOT-227B |
| Imagen | Número de pieza | Fabricantes | Descripción | En stock | Ver | |
|---|---|---|---|---|---|---|
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GA200-001PD | TE Connectivity Measurement Specialties | SENSOR TRANSDUCER 0.250-4.5V PCB | 0 | Detalles | |
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GA200-005WD | TE Connectivity Measurement Specialties | SENSOR PRESS GAUGE 5" H2O 3SIP | 0 | Detalles | |
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GA200-010WD | TE Connectivity Measurement Specialties | SENSOR PRESS DIFF 10" H2O 3SIP | 0 | Detalles | |
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GA200-015WD | TE Connectivity Measurement Specialties | SENSOR PRESS GAUGE 15" H2O 3SIP | 0 | Detalles | |
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GA200SA60S | Vishay Semiconductor Diodes Division | IGBT STD 600V 100A SOT227 | 0 | Detalles | |
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GA200SA60U | Vishay Semiconductor Diodes Division | IGBT UFAST 600V 100A SOT227 | 0 | Detalles | |
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GA201AE3 | Microsemi Corporation | SCR | - | 1337 | Detalles |
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GA20JT12-247 | GeneSiC Semiconductor | TRANS SJT 1.2KV 20A | 0 | Detalles | |
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GA20JT12-263 | GeneSiC Semiconductor | TRANS SJT 1200V 45A | 263 | Detalles | |
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GA20SICP12-247 | GeneSiC Semiconductor | TRANS SJT 1200V 45A TO247 | 0 | Detalles | |
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GA20SICP12-263 | GeneSiC Semiconductor | SIC CO-PACK SJT/RECT 20A 1.2KV | 90 | Detalles |