SQJ200EP-T1_GE3

MOSFET 2N-CH 20V 20A/60A PPAK SO
SQJ200EP-T1_GE3 P1
SQJ200EP-T1_GE3 P1
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Vishay Siliconix ~ SQJ200EP-T1_GE3

Part Number
SQJ200EP-T1_GE3
Manufacturer
Vishay Siliconix
Description
MOSFET 2N-CH 20V 20A/60A PPAK SO
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
- SQJ200EP-T1_GE3 PDF online browsing
Family
Transistors - FETs, MOSFETs - Arrays
  • In Stock : 3000 pcs
  • Reference Price : submit a request

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Product Parameter

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Part Number SQJ200EP-T1_GE3
Part Status Active
FET Type 2 N-Channel (Dual)
FET Feature Standard
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 20A, 60A
Rds On (Max) @ Id, Vgs 8.8 mOhm @ 16A, 10V
Vgs(th) (Max) @ Id 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 18nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 975pF @ 10V
Power - Max 27W, 48W
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Package / Case PowerPAK® SO-8 Dual
Supplier Device Package PowerPAK® SO-8 Dual Asymmetric

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