Images are for reference only.
See Product Specifications for product details.
| Part Number | TPN7R506NH,L1Q |
|---|---|
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25°C | 26A (Tc) |
| Drive Voltage (Max Rds On,Min Rds On) | 6.5V, 10V |
| Vgs(th) (Max) @ Id | 4V @ 200µA |
| Gate Charge (Qg) (Max) @ Vgs | 22nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 1800pF @ 30V |
| Vgs (Max) | ±20V |
| FET Feature | - |
| Power Dissipation (Max) | 700mW (Ta), 42W (Tc) |
| Rds On (Max) @ Id, Vgs | 7.5 mOhm @ 13A, 10V |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 8-TSON Advance (3.3x3.3) |
| Package / Case | 8-PowerVDFN |
| Image | Part Number | Manufacturers | Description | In Stock | View | |
|---|---|---|---|---|---|---|
 |
TPN7R506NH,L1Q | Toshiba Semiconductor and Storage | MOSFET N-CH 60V 26A 8TSON | - | 5000 | Details |