IKW30N65ES5XKSA1

IGBT 650V 30A FAST DIODE TO247-3
IKW30N65ES5XKSA1 P1
IKW30N65ES5XKSA1 P1
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Infineon Technologies ~ IKW30N65ES5XKSA1

Part Number
IKW30N65ES5XKSA1
Manufacturer
Infineon Technologies
Description
IGBT 650V 30A FAST DIODE TO247-3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
IKW30N65ES5XKSA1.pdf IKW30N65ES5XKSA1 PDF online browsing
Family
Transistors - IGBTs - Single
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Product Parameter

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Part Number IKW30N65ES5XKSA1
Part Status Active
IGBT Type Trench
Voltage - Collector Emitter Breakdown (Max) 650V
Current - Collector (Ic) (Max) 62A
Current - Collector Pulsed (Icm) 120A
Vce(on) (Max) @ Vge, Ic 1.7V @ 15V, 30A
Power - Max 188W
Switching Energy 560µJ (on), 320µJ (off)
Input Type Standard
Gate Charge 70nC
Td (on/off) @ 25°C 17ns/124ns
Test Condition 400V, 30A, 13 Ohm, 15V
Reverse Recovery Time (trr) 75ns
Operating Temperature -40°C ~ 175°C (TJ)
Mounting Type Through Hole
Package / Case TO-247-3
Supplier Device Package PG-TO247-3

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