Images are for reference only.
See Product Specifications for product details.
| Part Number | GA50JT06-258 |
|---|---|
| Part Status | Active |
| FET Type | - |
| Technology | SiC (Silicon Carbide Junction Transistor) |
| Drain to Source Voltage (Vdss) | 600V |
| Current - Continuous Drain (Id) @ 25°C | 100A (Tc) |
| Drive Voltage (Max Rds On,Min Rds On) | - |
| Vgs(th) (Max) @ Id | - |
| Gate Charge (Qg) (Max) @ Vgs | - |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Vgs (Max) | - |
| FET Feature | - |
| Power Dissipation (Max) | 769W (Tc) |
| Rds On (Max) @ Id, Vgs | 25 mOhm @ 50A |
| Operating Temperature | -55°C ~ 225°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-258 |
| Package / Case | TO-258-3, TO-258AA |
| Image | Part Number | Manufacturers | Description | In Stock | View | |
|---|---|---|---|---|---|---|
|
GA50JT06-258 | GeneSiC Semiconductor | TRANS SJT 600V 100A | 0 | Details | |
 |
GA50JT12-247 | GeneSiC Semiconductor | TRANS SJT 1.2KV 50A | 77 | Details | |
 |
GA50JT12-263 | GeneSiC Semiconductor | TRANSISTOR 1200V 100A TO263-7 | - | 0 | Details |
 |
GA50JT17-247 | GeneSiC Semiconductor | TRANS SJT 1.7KV 100A | 0 | Details | |
 |
GA50K6A1A | TE Connectivity Measurement Specialties | NTC THERMISTOR 50K OHM 0.1C BEAD | - | 486 | Details |
 |
GA50SICP12-227 | GeneSiC Semiconductor | SIC CO-PACK SJT/RECT 50A 1.2KV | 4 | Details |