GT10J312(Q)

IGBT 600V 10A 60W TO220SM
GT10J312(Q) P1
GT10J312(Q) P1
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Toshiba Semiconductor and Storage ~ GT10J312(Q)

Part Number
GT10J312(Q)
Manufacturer
Toshiba Semiconductor and Storage
Description
IGBT 600V 10A 60W TO220SM
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
GT10J312(Q).pdf GT10J312(Q) PDF online browsing
Family
Transistors - IGBTs - Single
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Product Parameter

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Part Number GT10J312(Q)
Part Status Obsolete
IGBT Type -
Voltage - Collector Emitter Breakdown (Max) 600V
Current - Collector (Ic) (Max) 10A
Current - Collector Pulsed (Icm) 20A
Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 10A
Power - Max 60W
Switching Energy -
Input Type Standard
Gate Charge -
Td (on/off) @ 25°C 400ns/400ns
Test Condition 300V, 10A, 100 Ohm, 15V
Reverse Recovery Time (trr) 200ns
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package TO-220SM

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