GSID200A120S3B1

SILICON IGBT MODULES
GSID200A120S3B1 P1
GSID200A120S3B1 P1
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Global Power Technologies Group ~ GSID200A120S3B1

Part Number
GSID200A120S3B1
Manufacturer
Global Power Technologies Group
Description
SILICON IGBT MODULES
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
GSID200A120S3B1.pdf GSID200A120S3B1 PDF online browsing
Family
Transistors - IGBTs - Modules
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Product Parameter

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Part Number GSID200A120S3B1
Part Status Active
IGBT Type -
Configuration 2 Independent
Voltage - Collector Emitter Breakdown (Max) 1200V
Current - Collector (Ic) (Max) 400A
Power - Max 1595W
Vce(on) (Max) @ Vge, Ic 2V @ 15V, 200A
Current - Collector Cutoff (Max) 1mA
Input Capacitance (Cies) @ Vce 20nF @ 25V
Input Standard
NTC Thermistor No
Operating Temperature -40°C ~ 150°C
Mounting Type Chassis Mount
Package / Case D-3 Module
Supplier Device Package D3

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