SISS70DN-T1-GE3

MOSFET N-CH 125V
SISS70DN-T1-GE3 P1
SISS70DN-T1-GE3 P1
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Vishay Siliconix ~ SISS70DN-T1-GE3

Part Number
SISS70DN-T1-GE3
Manufacturer
Vishay Siliconix
Description
MOSFET N-CH 125V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
- SISS70DN-T1-GE3 PDF online browsing
Family
Transistors - FETs, MOSFETs - Single
  • In Stock : 102576 pcs
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Product Parameter

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Part Number SISS70DN-T1-GE3
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 125V
Current - Continuous Drain (Id) @ 25°C 8.5A (Ta), 31A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 29.8 mOhm @ 8.5A, 10V
Vgs(th) (Max) @ Id 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 15.3nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 535pF @ 62.5V
FET Feature -
Power Dissipation (Max) 5.1W (Ta), 65.8W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerPAK® 1212-8S
Package / Case PowerPAK® 1212-8S

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