Images are for reference only.
See Product Specifications for product details.
| Part Number | SI3460BDV-T1-E3 |
|---|---|
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 8A (Tc) |
| Drive Voltage (Max Rds On,Min Rds On) | 1.8V, 4.5V |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 24nC @ 8V |
| Input Capacitance (Ciss) (Max) @ Vds | 860pF @ 10V |
| Vgs (Max) | ±8V |
| FET Feature | - |
| Power Dissipation (Max) | 2W (Ta), 3.5W (Tc) |
| Rds On (Max) @ Id, Vgs | 27 mOhm @ 5.1A, 4.5V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 6-TSOP |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Image | Part Number | Manufacturers | Description | In Stock | View | |
|---|---|---|---|---|---|---|
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SI3460-E02-GM | Silicon Labs | IC POWER MANAGEMENT CTLR 11VQFN | 0 | Details | |
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SI3460-E02-GMR | Silicon Labs | IC POWER MANAGEMENT CTLR 11VQFN | 0 | Details | |
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SI3460-E03-GM | Silicon Labs | IC POWER MANAGEMENT CTLR 11VQFN | 0 | Details | |
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SI3460-E03-GMR | Silicon Labs | IC POWER MANAGEMENT CTLR 11VQFN | 0 | Details | |
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SI3460BDV-T1-E3 | Vishay Siliconix | MOSFET N-CH 20V 8A 6-TSOP | - | 12000 | Details |
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SI3460BDV-T1-GE3 | Vishay Siliconix | MOSFET N-CH 20V 8A 6-TSOP | - | 0 | Details |
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SI3460DDV-T1-GE3 | Vishay Siliconix | MOSFET N-CH 20V 7.9A 6-TSOP | - | 0 | Details |
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SI3460DV-T1-E3 | Vishay Siliconix | MOSFET N-CH 20V 5.1A 6TSOP | - | 3000 | Details |
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SI3460DV-T1-GE3 | Vishay Siliconix | MOSFET N-CH 20V 5.1A 6TSOP | - | 0 | Details |
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SI3461-E01-GM | Silicon Labs | IC POWER MANAGEMENT CTLR 11VQFN | 0 | Details | |
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SI3461-E01-GMR | Silicon Labs | IC POWER MANAGEMENT CTLR 11VQFN | 0 | Details | |
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SI3461-E02-GM | Silicon Labs | IC POWER MANAGEMENT CTLR 11VQFN | 0 | Details |