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Toshiba Semiconductor and Storage ~ TPCF8A01(TE85L)

Part Number	TPCF8A01(TE85L)
Part Status	Obsolete
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25°C	3A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	2V, 4.5V
Rds On (Max) @ Id, Vgs	49 mOhm @ 1.5A, 4.5V
Vgs(th) (Max) @ Id	1.2V @ 200µA
Gate Charge (Qg) (Max) @ Vgs	7.5nC @ 5V
Vgs (Max)	±12V
Input Capacitance (Ciss) (Max) @ Vds	590pF @ 10V
FET Feature	Schottky Diode (Isolated)
Power Dissipation (Max)	330mW (Ta)
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	VS-8 (2.9x1.5)
Package / Case	8-SMD, Flat Lead

Part Number	Manufacturers	Description	PDF	In Stock	View
TPCF8101(TE85L,F,M	Toshiba Semiconductor and Storage	MOSFET P-CH 12V 6A VS-8		0	Details
TPCF8102(TE85L,F,M	Toshiba Semiconductor and Storage	MOSFET P-CH 20V 6A VS8 2-3U1A		0	Details
TPCF8104(TE85L,F,M	Toshiba Semiconductor and Storage	MOSFET P-CH 30V 6A VS-8		0	Details
TPCF8107,LF	Toshiba Semiconductor and Storage	MOSFET P-CH 30V 6A VS-8	-	435	Details
TPCF8201(TE85L,F,M	Toshiba Semiconductor and Storage	MOSFET 2N-CH 20V 3A VS-8		0	Details
TPCF8304(TE85L,F,M	Toshiba Semiconductor and Storage	MOSFET 2P-CH 30V 3.2A VS-8		0	Details
TPCF8402(TE85L,F,M	Toshiba Semiconductor and Storage	MOSFET N/P-CH 30V 4A/3.2A VS-8		0	Details
TPCF8A01(TE85L)	Toshiba Semiconductor and Storage	MOSFET N-CH 20V 3A VS-8	-	19041	Details
TPCF8B01(TE85L,F,M	Toshiba Semiconductor and Storage	MOSFET P-CH 20V 2.7A VS-8		0	Details