TK290P60Y,RQ

MOSFET TRANSISTOR DPAK(OS) PD
TK290P60Y,RQ P1
TK290P60Y,RQ P1
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Toshiba Semiconductor and Storage ~ TK290P60Y,RQ

Part Number
TK290P60Y,RQ
Manufacturer
Toshiba Semiconductor and Storage
Description
MOSFET TRANSISTOR DPAK(OS) PD
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
- TK290P60Y,RQ PDF online browsing
Family
Transistors - FETs, MOSFETs - Single
  • In Stock : 4000 pcs
  • Reference Price : submit a request

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Product Parameter

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Part Number TK290P60Y,RQ
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600V
Current - Continuous Drain (Id) @ 25°C 11.5A (Tc)
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs(th) (Max) @ Id 4V @ 450µA
Gate Charge (Qg) (Max) @ Vgs 25nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 730pF @ 300V
Vgs (Max) ±30V
FET Feature -
Power Dissipation (Max) 100W (Tc)
Rds On (Max) @ Id, Vgs 290 mOhm @ 5.8A, 10V
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package DPAK
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63

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