STQ2HNK60ZR-AP

MOSFET N-CH 600V 0.5A TO-92
STQ2HNK60ZR-AP P1
STQ2HNK60ZR-AP P1
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STMicroelectronics ~ STQ2HNK60ZR-AP

Part Number
STQ2HNK60ZR-AP
Manufacturer
STMicroelectronics
Description
MOSFET N-CH 600V 0.5A TO-92
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
- STQ2HNK60ZR-AP PDF online browsing
Family
Transistors - FETs, MOSFETs - Single
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Product Parameter

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Part Number STQ2HNK60ZR-AP
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600V
Current - Continuous Drain (Id) @ 25°C 500mA (Tc)
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs(th) (Max) @ Id 4.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs 15nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 280pF @ 25V
Vgs (Max) ±30V
FET Feature -
Power Dissipation (Max) 3W (Tc)
Rds On (Max) @ Id, Vgs 4.8 Ohm @ 1A, 10V
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-92-3
Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

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