Images are for reference only.
See Product Specifications for product details.
| Part Number | BSP110,115 |
|---|---|
| Part Status | Obsolete |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25°C | 520mA (Tc) |
| Drive Voltage (Max Rds On,Min Rds On) | 5V |
| Vgs(th) (Max) @ Id | 2V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | - |
| Input Capacitance (Ciss) (Max) @ Vds | 40pF @ 10V |
| Vgs (Max) | ±20V |
| FET Feature | - |
| Power Dissipation (Max) | 6.25W (Tc) |
| Rds On (Max) @ Id, Vgs | 10 Ohm @ 150mA, 5V |
| Operating Temperature | -65°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | SOT-223 |
| Package / Case | TO-261-4, TO-261AA |
| Image | Part Number | Manufacturers | Description | In Stock | View | |
|---|---|---|---|---|---|---|
 |
BSP100,135 | Nexperia USA Inc. | MOSFET N-CH 30V 3.2A SOT223 | - | 0 | Details |
 |
BSP110,115 | Nexperia USA Inc. | MOSFET N-CH 100V 520MA SOT223 | - | 0 | Details |
 |
BSP122,115 | Nexperia USA Inc. | MOSFET N-CH 200V 0.55A SOT223 | 1000 | Details | |
 |
BSP123E6327T | Infineon Technologies | MOSFET N-CH 100V 370MA SOT223 | - | 0 | Details |
 |
BSP123L6327HTSA1 | Infineon Technologies | MOSFET N-CH 100V 370MA SOT223 | - | 0 | Details |
 |
BSP125 E6327 | Infineon Technologies | MOSFET N-CH 600V 120MA SOT-223 | - | 0 | Details |
 |
BSP125 E6433 | Infineon Technologies | MOSFET N-CH 600V 120MA SOT-223 | - | 0 | Details |
 |
BSP125H6327XTSA1 | Infineon Technologies | MOSFET N-CH 600V 120MA SOT-223 | 1000 | Details | |
 |
BSP125H6433XTMA1 | Infineon Technologies | MOSFET N-CH 600V 120MA SOT223 | 0 | Details | |
 |
BSP125L6327HTSA1 | Infineon Technologies | MOSFET N-CH 600V 120MA SOT-223 | - | 0 | Details |
 |
BSP125L6433HTMA1 | Infineon Technologies | MOSFET N-CH 600V 120MA SOT-223 | - | 0 | Details |
 |
BSP126,115 | Nexperia USA Inc. | MOSFET N-CH 250V 375MA SOT223 | 5000 | Details |