IXFN50N120SK

MOSFET N-CH
IXFN50N120SK P1
IXFN50N120SK P1
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IXYS ~ IXFN50N120SK

Part Number
IXFN50N120SK
Manufacturer
IXYS
Description
MOSFET N-CH
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
- IXFN50N120SK PDF online browsing
Family
Transistors - FETs, MOSFETs - Single
  • In Stock : 1103 pcs
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Product Parameter

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Part Number IXFN50N120SK
Part Status Active
FET Type N-Channel
Technology SiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss) 1200V
Current - Continuous Drain (Id) @ 25°C 48A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 20V
Rds On (Max) @ Id, Vgs 52 mOhm @ 40A, 20V
Vgs(th) (Max) @ Id 2.8V @ 10mA
Gate Charge (Qg) (Max) @ Vgs 115nC @ 20V
Vgs (Max) +20V, -5V
Input Capacitance (Ciss) (Max) @ Vds 1895pF @ 1000V
FET Feature -
Power Dissipation (Max) -
Operating Temperature -40°C ~ 175°C (TJ)
Mounting Type Chassis Mount
Supplier Device Package SOT-227B
Package / Case SOT-227-4, miniBLOC

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