2SK3565(Q,M)

MOSFET N-CH 900V 5A TO-220SIS
2SK3565(Q,M) P1
2SK3565(Q,M) P2
2SK3565(Q,M) P3
2SK3565(Q,M) P4
2SK3565(Q,M) P1
2SK3565(Q,M) P2
2SK3565(Q,M) P3
2SK3565(Q,M) P4
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Toshiba Semiconductor and Storage ~ 2SK3565(Q,M)

Part Number
2SK3565(Q,M)
Manufacturer
Toshiba Semiconductor and Storage
Description
MOSFET N-CH 900V 5A TO-220SIS
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
2SK3565(Q,M).pdf 2SK3565(Q,M) PDF online browsing
Family
Transistors - FETs, MOSFETs - Single
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Product Parameter

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Part Number 2SK3565(Q,M)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 900V
Current - Continuous Drain (Id) @ 25°C 5A (Ta)
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 28nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 1150pF @ 25V
Vgs (Max) ±30V
FET Feature -
Power Dissipation (Max) 45W (Tc)
Rds On (Max) @ Id, Vgs 2.5 Ohm @ 3A, 10V
Operating Temperature 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220SIS
Package / Case TO-220-3 Full Pack

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