Images are for reference only.
See Product Specifications for product details.
| Part Number | FF23MR12W1M1B11BOMA1 |
|---|---|
| Part Status | Active |
| FET Type | 2 N-Channel (Dual) |
| FET Feature | Silicon Carbide (SiC) |
| Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
| Current - Continuous Drain (Id) @ 25°C | 50A |
| Rds On (Max) @ Id, Vgs | 23 mOhm @ 50A, 15V |
| Vgs(th) (Max) @ Id | 5.55V @ 20mA |
| Gate Charge (Qg) (Max) @ Vgs | 125nC @ 15V |
| Input Capacitance (Ciss) (Max) @ Vds | 3950pF @ 800V |
| Power - Max | 20mW |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Mounting Type | Chassis Mount |
| Package / Case | Module |
| Supplier Device Package | Module |
| Image | Part Number | Manufacturers | Description | In Stock | View | |
|---|---|---|---|---|---|---|
|
FF23MR12W1M1B11BOMA1 | Infineon Technologies | MOSFET 2 N-CH 1200V 50A MODULE | - | 676 | Details |