GSID600A120S4B1

SILICON IGBT MODULES
GSID600A120S4B1 P1
GSID600A120S4B1 P1
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Global Power Technologies Group ~ GSID600A120S4B1

Part Number
GSID600A120S4B1
Manufacturer
Global Power Technologies Group
Description
SILICON IGBT MODULES
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
GSID600A120S4B1.pdf GSID600A120S4B1 PDF online browsing
Family
Transistors - IGBTs - Modules
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Product Parameter

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Part Number GSID600A120S4B1
Part Status Active
IGBT Type -
Configuration Half Bridge
Voltage - Collector Emitter Breakdown (Max) 1200V
Current - Collector (Ic) (Max) 1130A
Power - Max 3060W
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 600A
Current - Collector Cutoff (Max) 1mA
Input Capacitance (Cies) @ Vce 51nF @ 25V
Input Standard
NTC Thermistor Yes
Operating Temperature -40°C ~ 150°C
Mounting Type Chassis Mount
Package / Case Module
Supplier Device Package Module

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