CDBDSC5650-G

DIODE SILICON CARBIDE POWER SCHO
CDBDSC5650-G P1
CDBDSC5650-G P1
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Comchip Technology ~ CDBDSC5650-G

Part Number
CDBDSC5650-G
Manufacturer
Comchip Technology
Description
DIODE SILICON CARBIDE POWER SCHO
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
- CDBDSC5650-G PDF online browsing
Family
Diodes - Rectifiers - Single
  • In Stock : 29271 pcs
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Product Parameter

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Part Number CDBDSC5650-G
Part Status Active
Diode Type Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max) 650V
Current - Average Rectified (Io) 21.5A (DC)
Voltage - Forward (Vf) (Max) @ If 1.7V @ 5A
Speed No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) 0ns
Current - Reverse Leakage @ Vr 100µA @ 650V
Capacitance @ Vr, F 424pF @ 0V, 1MHz
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package D-PAK (TO-252)
Operating Temperature - Junction -55°C ~ 175°C

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