SQ1912AEEH-T1_GE3

MOSFET 2N-CH 20V POWERPAK SC70-6
SQ1912AEEH-T1_GE3 P1
SQ1912AEEH-T1_GE3 P1
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Vishay Siliconix ~ SQ1912AEEH-T1_GE3

Part Number
SQ1912AEEH-T1_GE3
Manufacturer
Vishay Siliconix
Description
MOSFET 2N-CH 20V POWERPAK SC70-6
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
- SQ1912AEEH-T1_GE3 PDF online browsing
Family
Transistors - FETs, MOSFETs - Arrays
  • In Stock : 341970 pcs
  • Reference Price : submit a request

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Product Parameter

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Part Number SQ1912AEEH-T1_GE3
Part Status Active
FET Type 2 N-Channel (Dual)
FET Feature Standard
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 800mA (Tc)
Rds On (Max) @ Id, Vgs 280 mOhm @ 1.2A, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 1.25nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 27pF @ 10V
Power - Max 1.5W
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Package / Case PowerPAK® SC-70-6 Dual
Supplier Device Package PowerPAK® SC-70-6 Dual

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