SIZ200DT-T1-GE3

MOSFET N-CH DUAL 30V
SIZ200DT-T1-GE3 P1
SIZ200DT-T1-GE3 P1
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Vishay Siliconix ~ SIZ200DT-T1-GE3

Part Number
SIZ200DT-T1-GE3
Manufacturer
Vishay Siliconix
Description
MOSFET N-CH DUAL 30V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
- SIZ200DT-T1-GE3 PDF online browsing
Family
Transistors - FETs, MOSFETs - Arrays
  • In Stock : 135214 pcs
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Product Parameter

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Part Number SIZ200DT-T1-GE3
Part Status Active
FET Type 2 N-Channel (Dual)
FET Feature Standard
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 22A (Ta), 61A (Tc), 22A (Ta), 60A (Tc)
Rds On (Max) @ Id, Vgs 5.5 mOhm @ 10A, 10V, 5.8 mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 28nC @ 10V, 30nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 1510pF @ 15V, 1600pF @ 15V
Power - Max 4.3W (Ta), 33W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case 8-PowerWDFN
Supplier Device Package 8-PowerPair® (3.3x3.3)

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