SI3900DV-T1-GE3

MOSFET 2N-CH 20V 2A 6-TSOP
SI3900DV-T1-GE3 P1
SI3900DV-T1-GE3 P1
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Vishay Siliconix ~ SI3900DV-T1-GE3

Part Number
SI3900DV-T1-GE3
Manufacturer
Vishay Siliconix
Description
MOSFET 2N-CH 20V 2A 6-TSOP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
- SI3900DV-T1-GE3 PDF online browsing
Family
Transistors - FETs, MOSFETs - Arrays
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Product Parameter

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Part Number SI3900DV-T1-GE3
Part Status Active
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 2A
Rds On (Max) @ Id, Vgs 125 mOhm @ 2.4A, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 4nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds -
Power - Max 830mW
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case SOT-23-6 Thin, TSOT-23-6
Supplier Device Package 6-TSOP

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