SI3588DV-T1-GE3

MOSFET N/P-CH 20V 2.5A 6-TSOP
SI3588DV-T1-GE3 P1
SI3588DV-T1-GE3 P1
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Vishay Siliconix ~ SI3588DV-T1-GE3

Part Number
SI3588DV-T1-GE3
Manufacturer
Vishay Siliconix
Description
MOSFET N/P-CH 20V 2.5A 6-TSOP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
- SI3588DV-T1-GE3 PDF online browsing
Family
Transistors - FETs, MOSFETs - Arrays
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Product Parameter

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Part Number SI3588DV-T1-GE3
Part Status Obsolete
FET Type N and P-Channel
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 2.5A, 570mA
Rds On (Max) @ Id, Vgs 80 mOhm @ 3A, 4.5V
Vgs(th) (Max) @ Id 450mV @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs 7.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds -
Power - Max 830mW, 83mW
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case SOT-23-6 Thin, TSOT-23-6
Supplier Device Package 6-TSOP

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