SI2371EDS-T1-GE3

MOSFET P-CH 30V 4.8A SOT-23
SI2371EDS-T1-GE3 P1
SI2371EDS-T1-GE3 P1
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Vishay Siliconix ~ SI2371EDS-T1-GE3

Part Number
SI2371EDS-T1-GE3
Manufacturer
Vishay Siliconix
Description
MOSFET P-CH 30V 4.8A SOT-23
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
- SI2371EDS-T1-GE3 PDF online browsing
Family
Transistors - FETs, MOSFETs - Single
  • In Stock : 63000 pcs
  • Reference Price : submit a request

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Product Parameter

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Part Number SI2371EDS-T1-GE3
Part Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 4.8A (Tc)
Drive Voltage (Max Rds On,Min Rds On) 2.5V, 10V
Vgs(th) (Max) @ Id 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 35nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds -
Vgs (Max) ±12V
FET Feature -
Power Dissipation (Max) 1W (Ta), 1.7W (Tc)
Rds On (Max) @ Id, Vgs 45 mOhm @ 3.7A, 10V
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package SOT-23
Package / Case TO-236-3, SC-59, SOT-23-3

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