RN1119MFV,L3F

X34 PB-F VESM TRANSISTOR PD 150M
RN1119MFV,L3F P1
RN1119MFV,L3F P1
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Toshiba Semiconductor and Storage ~ RN1119MFV,L3F

Part Number
RN1119MFV,L3F
Manufacturer
Toshiba Semiconductor and Storage
Description
X34 PB-F VESM TRANSISTOR PD 150M
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
- RN1119MFV,L3F PDF online browsing
Family
Transistors - Bipolar (BJT) - Single, Pre-Biased
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Product Parameter

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Part Number RN1119MFV,L3F
Part Status Active
Transistor Type NPN - Pre-Biased
Current - Collector (Ic) (Max) 100mA
Voltage - Collector Emitter Breakdown (Max) 50V
Resistor - Base (R1) 1 kOhms
Resistor - Emitter Base (R2) -
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic 300mV @ 500µA, 5mA
Current - Collector Cutoff (Max) 100nA (ICBO)
Frequency - Transition -
Power - Max 150mW
Mounting Type Surface Mount
Package / Case SOT-723
Supplier Device Package VESM

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