CSD85312Q3E

MOSFET 2N-CH 20V 39A 8VSON
CSD85312Q3E P1
CSD85312Q3E P1
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Texas Instruments ~ CSD85312Q3E

Part Number
CSD85312Q3E
Manufacturer
Texas Instruments
Description
MOSFET 2N-CH 20V 39A 8VSON
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
- CSD85312Q3E PDF online browsing
Family
Transistors - FETs, MOSFETs - Arrays
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Product Parameter

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Part Number CSD85312Q3E
Part Status Active
FET Type 2 N-Channel (Dual) Common Source
FET Feature Logic Level Gate, 5V Drive
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 39A
Rds On (Max) @ Id, Vgs 12.4 mOhm @ 10A, 8V
Vgs(th) (Max) @ Id 1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 15.2nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 2390pF @ 10V
Power - Max 2.5W
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case 8-PowerVDFN
Supplier Device Package 8-VSON (3.3x3.3)

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