NP83P06PDG-E1-AY

MOSFET P-CH 60V 83A TO-263
NP83P06PDG-E1-AY P1
NP83P06PDG-E1-AY P1
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Renesas Electronics America ~ NP83P06PDG-E1-AY

Part Number
NP83P06PDG-E1-AY
Manufacturer
Renesas Electronics America
Description
MOSFET P-CH 60V 83A TO-263
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
- NP83P06PDG-E1-AY PDF online browsing
Family
Transistors - FETs, MOSFETs - Single
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Product Parameter

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Part Number NP83P06PDG-E1-AY
Part Status Obsolete
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 83A (Tc)
Drive Voltage (Max Rds On,Min Rds On) 4.5V, 10V
Vgs(th) (Max) @ Id 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 190nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 10100pF @ 10V
Vgs (Max) ±20V
FET Feature -
Power Dissipation (Max) 1.8W (Ta), 150W (Tc)
Rds On (Max) @ Id, Vgs 8.8 mOhm @ 41.5A, 10V
Operating Temperature 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-263
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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