NCP81075DR2G

HIGH PERFORMANCE DUAL MOS
NCP81075DR2G P1
NCP81075DR2G P1
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ON Semiconductor ~ NCP81075DR2G

Part Number
NCP81075DR2G
Manufacturer
ON Semiconductor
Description
HIGH PERFORMANCE DUAL MOS
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
- NCP81075DR2G PDF online browsing
Family
PMIC - Gate Drivers
  • In Stock : 69541 pcs
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Product Parameter

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Part Number NCP81075DR2G
Part Status Active
Driven Configuration High-Side or Low-Side
Channel Type Independent
Number of Drivers 2
Gate Type N-Channel MOSFET
Voltage - Supply 8.5V ~ 20V
Logic Voltage - VIL, VIH 0.8V, 2.7V
Current - Peak Output (Source, Sink) 4A, 4A
Input Type Non-Inverting
High Side Voltage - Max (Bootstrap) 200V
Rise / Fall Time (Typ) 8ns, 7ns
Operating Temperature -40°C ~ 140°C (TJ)
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package 8-SOIC

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