FDG6303N_G

INTEGRATED CIRCUIT
FDG6303N_G P1
FDG6303N_G P1
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ON Semiconductor ~ FDG6303N_G

Part Number
FDG6303N_G
Manufacturer
ON Semiconductor
Description
INTEGRATED CIRCUIT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
- FDG6303N_G PDF online browsing
Family
Transistors - FETs, MOSFETs - Arrays
  • In Stock : 21111 pcs
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Product Parameter

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Part Number FDG6303N_G
Part Status Obsolete
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 25V
Current - Continuous Drain (Id) @ 25°C 500mA
Rds On (Max) @ Id, Vgs 450 mOhm @ 500mA, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 2.3nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 50pF @ 10V
Power - Max 300mW
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363
Supplier Device Package SC-88 (SC-70-6)

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