IXTT2N170D2

MOSFET N-CH 1700V 2A TO-268
IXTT2N170D2 P1
IXTT2N170D2 P1
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IXYS ~ IXTT2N170D2

Part Number
IXTT2N170D2
Manufacturer
IXYS
Description
MOSFET N-CH 1700V 2A TO-268
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
- IXTT2N170D2 PDF online browsing
Family
Transistors - FETs, MOSFETs - Single
  • In Stock : 421 pcs
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Product Parameter

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Part Number IXTT2N170D2
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 1700V
Current - Continuous Drain (Id) @ 25°C 2A (Tj)
Drive Voltage (Max Rds On,Min Rds On) -
Vgs(th) (Max) @ Id -
Gate Charge (Qg) (Max) @ Vgs 110nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds 3650pF @ 25V
Vgs (Max) ±20V
FET Feature Depletion Mode
Power Dissipation (Max) 568W (Tc)
Rds On (Max) @ Id, Vgs 6.5 Ohm @ 1A, 0V
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-268
Package / Case TO-268-3, D³Pak (2 Leads + Tab), TO-268AA

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