IXTA08N100P

MOSFET N-CH 1000V 0.8A TO-263
IXTA08N100P P1
IXTA08N100P P1
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IXYS ~ IXTA08N100P

Part Number
IXTA08N100P
Manufacturer
IXYS
Description
MOSFET N-CH 1000V 0.8A TO-263
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
- IXTA08N100P PDF online browsing
Family
Transistors - FETs, MOSFETs - Single
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Product Parameter

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Part Number IXTA08N100P
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 1000V
Current - Continuous Drain (Id) @ 25°C 800mA (Tc)
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs(th) (Max) @ Id 4V @ 50µA
Gate Charge (Qg) (Max) @ Vgs 11.3nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 240pF @ 25V
Vgs (Max) ±20V
FET Feature -
Power Dissipation (Max) 42W (Tc)
Rds On (Max) @ Id, Vgs 20 Ohm @ 500mA, 10V
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-263 (IXTA)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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