IXFB80N50Q2

MOSFET N-CH 500V 80A PLUS264
IXFB80N50Q2 P1
IXFB80N50Q2 P1
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IXYS ~ IXFB80N50Q2

Part Number
IXFB80N50Q2
Manufacturer
IXYS
Description
MOSFET N-CH 500V 80A PLUS264
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
- IXFB80N50Q2 PDF online browsing
Family
Transistors - FETs, MOSFETs - Single
  • In Stock : 173 pcs
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Product Parameter

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Part Number IXFB80N50Q2
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 500V
Current - Continuous Drain (Id) @ 25°C 80A (Tc)
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs(th) (Max) @ Id 5.5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs 250nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 15000pF @ 25V
Vgs (Max) ±30V
FET Feature -
Power Dissipation (Max) 960W (Tc)
Rds On (Max) @ Id, Vgs 60 mOhm @ 500mA, 10V
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package PLUS264™
Package / Case TO-264-3, TO-264AA

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