IXFB30N120P

MOSFET N-CH 1200V 30A PLUS264
IXFB30N120P P1
IXFB30N120P P1
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IXYS ~ IXFB30N120P

Part Number
IXFB30N120P
Manufacturer
IXYS
Description
MOSFET N-CH 1200V 30A PLUS264
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
- IXFB30N120P PDF online browsing
Family
Transistors - FETs, MOSFETs - Single
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Product Parameter

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Part Number IXFB30N120P
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 1200V
Current - Continuous Drain (Id) @ 25°C 30A (Tc)
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs(th) (Max) @ Id 6.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 310nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 22500pF @ 25V
Vgs (Max) ±20V
FET Feature -
Power Dissipation (Max) 1250W (Tc)
Rds On (Max) @ Id, Vgs 350 mOhm @ 500mA, 10V
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package PLUS264™
Package / Case TO-264-3, TO-264AA

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