BSZ0910NDXTMA1

DIFFERENTIATED MOSFETS
BSZ0910NDXTMA1 P1
BSZ0910NDXTMA1 P1
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Infineon Technologies ~ BSZ0910NDXTMA1

Part Number
BSZ0910NDXTMA1
Manufacturer
Infineon Technologies
Description
DIFFERENTIATED MOSFETS
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
- BSZ0910NDXTMA1 PDF online browsing
Family
Transistors - FETs, MOSFETs - Arrays
  • In Stock : 121046 pcs
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Product Parameter

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Part Number BSZ0910NDXTMA1
Part Status Active
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate, 4.5V Drive
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 9.5A (Ta), 25A (Tc)
Rds On (Max) @ Id, Vgs 9.5 mOhm @ 9A, 10V
Vgs(th) (Max) @ Id 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 5.6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 800pF @ 15V
Power - Max 1.9W (Ta), 31W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case 8-PowerVDFN
Supplier Device Package PG-WISON-8

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