BSC750N10NDGATMA1

MOSFET 2N-CH 100V 3.2A 8TDSON
BSC750N10NDGATMA1 P1
BSC750N10NDGATMA1 P1
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Infineon Technologies ~ BSC750N10NDGATMA1

Part Number
BSC750N10NDGATMA1
Manufacturer
Infineon Technologies
Description
MOSFET 2N-CH 100V 3.2A 8TDSON
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
- BSC750N10NDGATMA1 PDF online browsing
Family
Transistors - FETs, MOSFETs - Arrays
  • In Stock : 104691 pcs
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Product Parameter

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Part Number BSC750N10NDGATMA1
Part Status Active
FET Type 2 N-Channel (Dual)
FET Feature Standard
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 3.2A
Rds On (Max) @ Id, Vgs 75 mOhm @ 13A, 10V
Vgs(th) (Max) @ Id 4V @ 12µA
Gate Charge (Qg) (Max) @ Vgs 11nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 720pF @ 50V
Power - Max 26W
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case 8-PowerVDFN
Supplier Device Package PG-TDSON-8 Dual

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