Images are for reference only.
See Product Specifications for product details.
| Part Number | JANTX2N4091 |
|---|---|
| Part Status | Active |
| FET Type | N-Channel |
| Voltage - Breakdown (V(BR)GSS) | 40V |
| Drain to Source Voltage (Vdss) | 40V |
| Current - Drain (Idss) @ Vds (Vgs=0) | 30mA @ 20V |
| Current Drain (Id) - Max | - |
| Voltage - Cutoff (VGS off) @ Id | - |
| Input Capacitance (Ciss) (Max) @ Vds | 16pF @ 20V |
| Resistance - RDS(On) | 30 Ohm |
| Power - Max | 360mW |
| Operating Temperature | -65°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-206AA, TO-18-3 Metal Can |
| Supplier Device Package | TO-18 |
| Image | Part Number | Manufacturers | Description | In Stock | View | |
|---|---|---|---|---|---|---|
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JANTX1N1184 | Microsemi Corporation | DIODE GEN PURP 100V 35A DO5 | - | 0 | Details |
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JANTX1N1184R | Microsemi Corporation | DIODE GEN PURP 100V 35A DO203AB | - | 0 | Details |
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JANTX1N1186 | Microsemi Corporation | DIODE GEN PURP 200V 35A DO5 | - | 0 | Details |
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JANTX1N1186R | Microsemi Corporation | SILICON RECTIFIER | - | 1226 | Details |
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JANTX1N1188R | Microsemi Corporation | DIODE GEN PURP 400V 35A DO203AB | - | 0 | Details |
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JANTX1N1190 | Microsemi Corporation | DIODE GEN PURP 600V 35A DO5 | - | 87 | Details |
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JANTX1N1190R | Microsemi Corporation | DIODE GEN PURP 600V 35A DO5 | - | 100 | Details |
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JANTX1N1202A | Microsemi Corporation | DIODE GEN PURP 200V 12A DO203AA | - | 39 | Details |
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JANTX1N1202AR | Microsemi Corporation | DIODE GEN PURP 200V 12A DO203AA | - | 0 | Details |
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JANTX1N1204A | Microsemi Corporation | DIODE GEN PURP 400V 12A DO203AA | - | 36 | Details |
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JANTX1N1204AR | Microsemi Corporation | DIODE GEN PURP 400V 12A DO203AA | - | 4 | Details |
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JANTX1N1206A | Microsemi Corporation | DIODE GEN PURP 600V 12A DO203AA | - | 0 | Details |