IXTQ180N10T

MOSFET N-CH 100V 180A TO-3P
IXTQ180N10T P1
IXTQ180N10T P1
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IXYS ~ IXTQ180N10T

Part Number
IXTQ180N10T
Manufacturer
IXYS
Description
MOSFET N-CH 100V 180A TO-3P
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
- IXTQ180N10T PDF online browsing
Family
Transistors - FETs, MOSFETs - Single
  • In Stock : 119 pcs
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Product Parameter

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Part Number IXTQ180N10T
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 180A (Tc)
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs(th) (Max) @ Id 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 151nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 6900pF @ 25V
Vgs (Max) ±30V
FET Feature -
Power Dissipation (Max) 480W (Tc)
Rds On (Max) @ Id, Vgs 6.4 mOhm @ 25A, 10V
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-3P
Package / Case TO-3P-3, SC-65-3

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