IXFA10N80P

MOSFET N-CH 800V 10A TO-263
IXFA10N80P P1
IXFA10N80P P1
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IXYS ~ IXFA10N80P

Part Number
IXFA10N80P
Manufacturer
IXYS
Description
MOSFET N-CH 800V 10A TO-263
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
- IXFA10N80P PDF online browsing
Family
Transistors - FETs, MOSFETs - Single
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Product Parameter

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Part Number IXFA10N80P
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800V
Current - Continuous Drain (Id) @ 25°C 10A (Tc)
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs(th) (Max) @ Id 5.5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs 40nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 2050pF @ 25V
Vgs (Max) ±30V
FET Feature -
Power Dissipation (Max) 300W (Tc)
Rds On (Max) @ Id, Vgs 1.1 Ohm @ 5A, 10V
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-263 (IXFA)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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