IPG20N06S4L14ATMA2

MOSFET 2N-CH 8TDSON
IPG20N06S4L14ATMA2 P1
IPG20N06S4L14ATMA2 P1
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Infineon Technologies ~ IPG20N06S4L14ATMA2

Part Number
IPG20N06S4L14ATMA2
Manufacturer
Infineon Technologies
Description
MOSFET 2N-CH 8TDSON
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
IPG20N06S4L14ATMA2.pdf IPG20N06S4L14ATMA2 PDF online browsing
Family
Transistors - FETs, MOSFETs - Arrays
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Product Parameter

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Part Number IPG20N06S4L14ATMA2
Part Status Active
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 20A
Rds On (Max) @ Id, Vgs 13.7 mOhm @ 17A, 10V
Vgs(th) (Max) @ Id 2.2V @ 20µA
Gate Charge (Qg) (Max) @ Vgs 39nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 2890pF @ 25V
Power - Max 50W
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Package / Case 8-PowerVDFN
Supplier Device Package PG-TDSON-8-4

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