EPC2020ENGR

TRANS GAN 60V 60A BUMPED DIE
EPC2020ENGR P1
EPC2020ENGR P2
EPC2020ENGR P3
EPC2020ENGR P1
EPC2020ENGR P2
EPC2020ENGR P3
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See Product Specifications for product details.

EPC ~ EPC2020ENGR

Part Number
EPC2020ENGR
Manufacturer
EPC
Description
TRANS GAN 60V 60A BUMPED DIE
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
EPC2020ENGR.pdf EPC2020ENGR PDF online browsing
Family
Transistors - FETs, MOSFETs - Single
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Product Parameter

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Part Number EPC2020ENGR
Part Status Discontinued at Digi-Key
FET Type N-Channel
Technology GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 60A (Ta)
Drive Voltage (Max Rds On,Min Rds On) 5V
Vgs(th) (Max) @ Id 2.5V @ 16mA
Gate Charge (Qg) (Max) @ Vgs 16nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds 1800pF @ 30V
Vgs (Max) +6V, -4V
FET Feature -
Power Dissipation (Max) -
Rds On (Max) @ Id, Vgs 2.2 mOhm @ 31A, 5V
Operating Temperature -40°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package Die
Package / Case Die

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