SQ3419AEEV-T1_GE3

MOSFET P-CHANNEL 40V 6.9A 6TSOP
SQ3419AEEV-T1_GE3 P1
SQ3419AEEV-T1_GE3 P1
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Vishay Siliconix ~ SQ3419AEEV-T1_GE3

Part Number
SQ3419AEEV-T1_GE3
Manufacturer
Vishay Siliconix
Description
MOSFET P-CHANNEL 40V 6.9A 6TSOP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
- SQ3419AEEV-T1_GE3 PDF online browsing
Family
Transistors - FETs, MOSFETs - Single
  • In Stock : 215864 pcs
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Product Parameter

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Part Number SQ3419AEEV-T1_GE3
Part Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40V
Current - Continuous Drain (Id) @ 25°C 6.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 61 mOhm @ 2.5A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 12.5nC @ 4.5V
Vgs (Max) ±12V
Input Capacitance (Ciss) (Max) @ Vds 975pF @ 20V
FET Feature -
Power Dissipation (Max) 5W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 6-TSOP
Package / Case SOT-23-6 Thin, TSOT-23-6

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