TK14G65W5,RQ

MOSFET N-CH 650V 13.7A DPAK
TK14G65W5,RQ P1
TK14G65W5,RQ P1
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Toshiba Semiconductor and Storage ~ TK14G65W5,RQ

Part Number
TK14G65W5,RQ
Manufacturer
Toshiba Semiconductor and Storage
Description
MOSFET N-CH 650V 13.7A DPAK
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
- TK14G65W5,RQ PDF online browsing
Family
Transistors - FETs, MOSFETs - Single
  • In Stock : 1000 pcs
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Product Parameter

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Part Number TK14G65W5,RQ
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650V
Current - Continuous Drain (Id) @ 25°C 13.7A (Ta)
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs(th) (Max) @ Id 4.5V @ 690µA
Gate Charge (Qg) (Max) @ Vgs 40nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 1300pF @ 300V
Vgs (Max) ±30V
FET Feature -
Power Dissipation (Max) 130W (Tc)
Rds On (Max) @ Id, Vgs 300 mOhm @ 6.9A, 10V
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D2PAK
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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