Images are for reference only.
See Product Specifications for product details.
| Part Number | RN2709JE(TE85L,F) |
|---|---|
| Part Status | Active |
| Transistor Type | 2 PNP - Pre-Biased (Dual) (Emitter Coupled) |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Resistor - Base (R1) (Ohms) | 47k |
| Resistor - Emitter Base (R2) (Ohms) | 22k |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 70 @ 10mA, 5V |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 250µA, 5mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| Frequency - Transition | 200MHz |
| Power - Max | 100mW |
| Mounting Type | Surface Mount |
| Package / Case | SOT-553 |
| Supplier Device Package | ESV |
| Image | Part Number | Manufacturers | Description | In Stock | View | |
|---|---|---|---|---|---|---|
 |
RN2709JE(TE85L,F) | Toshiba Semiconductor and Storage | TRANS 2PNP PREBIAS 0.1W ESV | - | 4000 | Details |