Images are for reference only.
See Product Specifications for product details.
| Part Number | 1SS387CT,L3F |
|---|---|
| Part Status | Active |
| Diode Type | Standard |
| Voltage - DC Reverse (Vr) (Max) | 80V |
| Current - Average Rectified (Io) | 100mA |
| Voltage - Forward (Vf) (Max) @ If | 1.2V @ 100mA |
| Speed | Small Signal =< 200mA (Io), Any Speed |
| Reverse Recovery Time (trr) | 1.6ns |
| Current - Reverse Leakage @ Vr | 500nA @ 80V |
| Capacitance @ Vr, F | 0.5pF @ 0V, 1MHz |
| Mounting Type | Surface Mount |
| Package / Case | SOD-882 |
| Supplier Device Package | CST2 |
| Operating Temperature - Junction | 150°C (Max) |
| Image | Part Number | Manufacturers | Description | In Stock | View | |
|---|---|---|---|---|---|---|
 |
1SS300,LF | Toshiba Semiconductor and Storage | DIODE ARRAY GP 80V 100MA USM | - | 0 | Details |
 |
1SS301,LF | Toshiba Semiconductor and Storage | DIODE ARRAY GP 80V 100MA USM | - | 0 | Details |
 |
1SS301SU,LF | Toshiba Semiconductor and Storage | DIODE ARRAY GP 80V 100MA SC70 | - | 0 | Details |
 |
1SS302A,LF | Toshiba Semiconductor and Storage | DIODE SW 80V 100MA USM SC70 | 0 | Details | |
 |
1SS302TE85LF | Toshiba Semiconductor and Storage | DIODE ARRAY GP 80V 100MA SC70 | - | 6000 | Details |
 |
1SS306TE85LF | Toshiba Semiconductor and Storage | DIODE ARRAY GP 200V 100MA SC61B | - | 0 | Details |
 |
1SS307(TE85L,F) | Toshiba Semiconductor and Storage | DIODE GEN PURP 30V 100MA SMINI | - | 0 | Details |
 |
1SS307E,L3F | Toshiba Semiconductor and Storage | DIODE SW GP 80V 100MA ESC | 9628 | Details | |
 |
1SS308(TE85L,F | Toshiba Semiconductor and Storage | DIODE ARRAY GP 80V 100MA SC74A | - | 0 | Details |
 |
1SS309(TE85L,F) | Toshiba Semiconductor and Storage | DIODE ARRAY GP 80V 100MA SMV | - | 6000 | Details |
 |
1SS315TPH3F | Toshiba Semiconductor and Storage | DIODE SCHOTTKY 5V 30MA USC | 9060 | Details | |
 |
1SS319(TE85L,F) | Toshiba Semiconductor and Storage | DIODE SCHOTKY GP 40V 100MA SC61B | - | 9000 | Details |