TSM180N03PQ33 RGG

MOSFET N-CH 30V 25A 8PDFN
TSM180N03PQ33 RGG P1
TSM180N03PQ33 RGG P1
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Taiwan Semiconductor Corporation ~ TSM180N03PQ33 RGG

Part Number
TSM180N03PQ33 RGG
Manufacturer
Taiwan Semiconductor Corporation
Description
MOSFET N-CH 30V 25A 8PDFN
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
- TSM180N03PQ33 RGG PDF online browsing
Family
Transistors - FETs, MOSFETs - Single
  • In Stock : 408815 pcs
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Product Parameter

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Part Number TSM180N03PQ33 RGG
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 25A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 18 mOhm @ 12A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 4.1nC @ 4.5V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 345pF @ 25V
FET Feature -
Power Dissipation (Max) 21W (Tc)
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 8-PDFN (3x3)
Package / Case 8-PowerWDFN

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