RW1A025APT2CR

MOSFET P-CH 12V 2.5A WEMT6
RW1A025APT2CR P1
RW1A025APT2CR P2
RW1A025APT2CR P1
RW1A025APT2CR P2
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Rohm Semiconductor ~ RW1A025APT2CR

Part Number
RW1A025APT2CR
Manufacturer
Rohm Semiconductor
Description
MOSFET P-CH 12V 2.5A WEMT6
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
- RW1A025APT2CR PDF online browsing
Family
Transistors - FETs, MOSFETs - Single
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Product Parameter

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Part Number RW1A025APT2CR
Part Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 12V
Current - Continuous Drain (Id) @ 25°C 2.5A (Ta)
Drive Voltage (Max Rds On,Min Rds On) 1.5V, 4.5V
Vgs(th) (Max) @ Id 1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 16nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 2000pF @ 6V
Vgs (Max) -8V
FET Feature -
Power Dissipation (Max) 400mW (Ta)
Rds On (Max) @ Id, Vgs 62 mOhm @ 2.5A, 4.5V
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 6-WEMT
Package / Case SOT-563, SOT-666

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