RQ3C150BCTB

PCH -20V -30A MIDDLE POWER MOSFE
RQ3C150BCTB P1
RQ3C150BCTB P1
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Rohm Semiconductor ~ RQ3C150BCTB

Part Number
RQ3C150BCTB
Manufacturer
Rohm Semiconductor
Description
PCH -20V -30A MIDDLE POWER MOSFE
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
- RQ3C150BCTB PDF online browsing
Family
Transistors - FETs, MOSFETs - Single
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Product Parameter

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Part Number RQ3C150BCTB
Part Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 30A (Tc)
Drive Voltage (Max Rds On,Min Rds On) 4.5V
Vgs(th) (Max) @ Id 1.2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 60nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 4800pF @ 10V
Vgs (Max) ±8V
FET Feature -
Power Dissipation (Max) 20W (Tc)
Rds On (Max) @ Id, Vgs 6.7 mOhm @ 15A, 4.5V
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 8-HSMT (3.2x3)
Package / Case 8-PowerVDFN

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