2SK1058-E

MOSFET N-CH 160V 7A TO-3P
2SK1058-E P1
2SK1058-E P1
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Renesas Electronics America ~ 2SK1058-E

Part Number
2SK1058-E
Manufacturer
Renesas Electronics America
Description
MOSFET N-CH 160V 7A TO-3P
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
- 2SK1058-E PDF online browsing
Family
Transistors - FETs, MOSFETs - Single
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Product Parameter

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Part Number 2SK1058-E
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 160V
Current - Continuous Drain (Id) @ 25°C 7A (Ta)
Drive Voltage (Max Rds On,Min Rds On) -
Vgs(th) (Max) @ Id -
Gate Charge (Qg) (Max) @ Vgs -
Input Capacitance (Ciss) (Max) @ Vds 600pF @ 10V
Vgs (Max) ±15V
FET Feature -
Power Dissipation (Max) 100W (Tc)
Rds On (Max) @ Id, Vgs -
Operating Temperature 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-3P
Package / Case TO-3P-3, SC-65-3

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