FCB199N65S3

MOSFET N-CH 650V 14A D2PAK
FCB199N65S3 P1
FCB199N65S3 P1
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ON Semiconductor ~ FCB199N65S3

Part Number
FCB199N65S3
Manufacturer
ON Semiconductor
Description
MOSFET N-CH 650V 14A D2PAK
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Data sheet
- FCB199N65S3 PDF online browsing
Family
Transistors - FETs, MOSFETs - Single
  • In Stock : 48334 pcs
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Product Parameter

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Part Number FCB199N65S3
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650V
Current - Continuous Drain (Id) @ 25°C 14A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 199 mOhm @ 7A, 10V
Vgs(th) (Max) @ Id 4.5V @ 1.4mA
Gate Charge (Qg) (Max) @ Vgs 30nC @ 10V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 1225pF @ 400V
FET Feature -
Power Dissipation (Max) 98W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D²PAK (TO-263)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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