Images are for reference only.
See Product Specifications for product details.
| Part Number | JANTX1N5711UR-1/TR |
|---|---|
| Part Status | Active |
| Diode Type | Schottky |
| Voltage - DC Reverse (Vr) (Max) | 50V |
| Current - Average Rectified (Io) | 33mA |
| Voltage - Forward (Vf) (Max) @ If | 1V @ 15mA |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | - |
| Current - Reverse Leakage @ Vr | 200nA @ 50V |
| Capacitance @ Vr, F | 2pF @ 0V, 1MHz |
| Mounting Type | Surface Mount |
| Package / Case | DO-213AA |
| Supplier Device Package | DO-213AA |
| Operating Temperature - Junction | -65°C ~ 150°C |
| Image | Part Number | Manufacturers | Description | In Stock | View | |
|---|---|---|---|---|---|---|
 |
JANTX1N1184 | Microsemi Corporation | DIODE GEN PURP 100V 35A DO5 | - | 0 | Details |
|
JANTX1N1184R | Microsemi Corporation | DIODE GEN PURP 100V 35A DO203AB | - | 0 | Details |
|
JANTX1N1186 | Microsemi Corporation | DIODE GEN PURP 200V 35A DO5 | - | 0 | Details |
|
JANTX1N1186R | Microsemi Corporation | SILICON RECTIFIER | - | 1226 | Details |
|
JANTX1N1188R | Microsemi Corporation | DIODE GEN PURP 400V 35A DO203AB | - | 0 | Details |
 |
JANTX1N1190 | Microsemi Corporation | DIODE GEN PURP 600V 35A DO5 | - | 87 | Details |
 |
JANTX1N1190R | Microsemi Corporation | DIODE GEN PURP 600V 35A DO5 | - | 100 | Details |
 |
JANTX1N1202A | Microsemi Corporation | DIODE GEN PURP 200V 12A DO203AA | - | 39 | Details |
|
JANTX1N1202AR | Microsemi Corporation | DIODE GEN PURP 200V 12A DO203AA | - | 0 | Details |
 |
JANTX1N1204A | Microsemi Corporation | DIODE GEN PURP 400V 12A DO203AA | - | 36 | Details |
 |
JANTX1N1204AR | Microsemi Corporation | DIODE GEN PURP 400V 12A DO203AA | - | 4 | Details |
|
JANTX1N1206A | Microsemi Corporation | DIODE GEN PURP 600V 12A DO203AA | - | 0 | Details |